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Online | Offline Tuitions for VLSI Design

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UNIT – I

MOS Transistor Theory: nMOS Enhancement Transistor, pMOS Enhancement transistor, Threshold voltage, Fabrication of MOSFET: Silicon Semiconductor technology, Wafter processing, Oxidation, Epitaxy, Deposition, Ion-implanation and diffusion, The silicon gate Process, CMOS Technology, basic n-well cmos process, p-well process, twin tub process CMOS process enhancement: metal interconnect, Polysilicon / Refractory metal interconnect, Circuit element: Resistor, Capacitor.                                    

 

UNIT – II

Operation of MOS transistor as a switch, Design and analysis of nMOS, pMOS and CMOS circuits, CMOS Logic, The Inverter, NAND gate, NOR Gate, Compound Gate.

                                                                                                                 

UNIT – III

Modeling of MOS transistors using SPICE, MOS Inverters: Static Characteristics, MOS Inverters: Switching Characteristics and Interconnect Effects, Combinational MOS Logic Circuits: MUX, DMUX, Transmission gate, Differential Inverter, Tristate Inverter.

                                                                                                              

 

UNIT – IV

Sequential MOS Logic Circuits, Dynamic Logic Circuits, Semiconductor Memories.

 

TEXT BOOK:

1.         Sung-Mo Kang and Yusuf Leblebici, “CMOS – Digital Integrated Circuits Analysis and Design”, TMH, 2004.

 

REFERENCE BOOKS:

1.         Douglas A. Pucknell, “Basic VLSI Design, 3^rd Edition, 2004.

2.         Neil H. E. Weste & K. Eshranghian, “Principles of CMOS VLSI design”, 2^nd Edition, Addison Wesley, 2003.

3.         S. M. Sze, “VLSI Technology, Wiley, 2000.

4.         Demassa & Ciccone, “Digital Integrated Circuits”, Wiley Publications, 2003.

5.         Jacob Millman and Arvin Grabel, “Microelectronics”, TMH, 2004.

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